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SiR878DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.014 at V GS = 10 V
I D (A) a
40
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
100
0.0148 at V GS = 7.5 V
0.019 at V GS = 4.5 V
38
34
13.6 nC
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK ? SO-8
APPLICATIONS
? DC/DC Primary Side Switch
6.15 mm
1
S
S
5.15 mm
? Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
? Industrial
D
2
3
S
G
4
D
8
D
7
6
D
5
D
G
Bottom View
Ordering Information: SiR878DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
100
± 20
40
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
32
13.3 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = ? 0.1 mH
I DM
I S
I AS
E AS
10.6 b, c
80
40
4.5 b, c
20
20
A
mJ
T C = 25 °C
44.5
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
28.5
5.0 b, c
W
T A = 70 °C
3.2 b, c
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
20 25
2.1 2.8
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65939
S10-2685-Rev. B, 22-Nov-10
www.vishay.com
1
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